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US 2018/0323074 A1Published application
Metal-based passivation-assisted plasma etching of iii-v semiconductors
AssigneeLawrence Livermore National Security, LLC
InventorsSara Elizabeth Harrison, Clint Frye, Rebecca J. Nikolic, Qinghui Shao, Lars Voss
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Abstract
According to one embodiment, a method includes performing a plasma etching process on a masked III-V semiconductor, and forming a passivation layer on etched portions of the III-V semiconductor. The passivation layer includes at least one of a group III element and/or a metal from the following: Ni, Cr, W, Mo, Pt, Pd, Mg, Ti, Zr, Hf, Y, Ta, and Sc.
Claims20
A method, comprising:
- performing a plasma etching process on a masked III-V semiconductor;
- and
- forming a passivation layer on etched portions of the III-V semiconductor, the passivation layer comprising at least one of a group III element and/or a metal selected from the group consisting of Ni, Cr, W, Mo, Pt, Pd, Mg, Ti, Zr, Hf, Y, Ta, and Sc.
A structure, comprising:
- a III-V semiconductor having etched portions;
- and
- a passivation layer on the etched portions of the III-V semiconductor, the passivation layer comprising at least one of a group III element and/or a metal selected from the group consisting of Ni, Cr, W, Mo, Pt, Pd, Mg, Ti, Zr, Hf, Y, Ta, and Sc.
Dependencies are inferred from the claim text.