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US 2018/0323071 A1Published application
Stress Relieving Semiconductor Layer
AssigneeSensor Electronic Technology, Inc.
InventorsMaxim S. Shatalov, Jinwei Yang, Wenhong Sun, Rakesh Jain, Michael Shur, Remigijus Gaska
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Abstract
A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.
Claims20
A structure comprising:
- a substrate;
- a nucleation layer located on the substrate, wherein the nucleation layer is formed of a plurality of nucleation islands;
- and
- a cavity containing layer located over the nucleation layer, wherein the cavity containing layer is formed of a semiconductor material, has a thickness greater than two monolayers, and has a plurality of cavities, and wherein the plurality of cavities have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.
1 more element
A device comprising:
- a substrate;
- a nucleation layer located on the substrate, wherein the nucleation layer is formed of a plurality of nucleation islands;
- a cavity containing layer located over the nucleation layer, wherein the cavity containing layer is formed of a semiconductor material, has a thickness greater than two monolayers, and has a plurality of cavities, and wherein the plurality of cavities have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers;
- and
- a semiconductor layer located over the cavity containing layer, wherein the semiconductor layer contains no cavities.
2 more elements
A method comprising:
- fabricating a semiconductor structure, wherein the fabricating includes:
- growing a nucleation layer on a substrate, wherein the nucleation layer is formed of a plurality of nucleation islands;
- forming a cavity containing layer over the nucleation layer, wherein the cavity containing layer has a thickness greater than two monolayers and a plurality of cavities;
- and
- forming a semiconductor layer directly on the cavity containing layer, wherein the semiconductor layer comprises AlxGa1-xN, wherein 0.8<x<1.
2 more elements
Dependencies are inferred from the claim text.