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US 2018/0323068 A1Published application
Methods of Forming Tungsten Pillars
AssigneeApplied Materials, Inc.
InventorsAbhijit Basu Mallick, Pramit Manna, Yihong Chen, Ziqing Duan, Rui Cheng, Shishi Jiang
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Abstract
Methods of forming self-aligned patterns are described. A film material is deposited on a patterned film to fill and cover features formed by the patterned film. The film material is recessed to a level below the top of the patterned film. The recessed film is converted to a metal film by exposure to a metal precursor followed by volumetric expansion of the metal film.
Claims20
A processing method comprising:
- providing a substrate surface with a patterned film forming at least one feature, the at least one feature extending a depth from a top surface of the patterned film to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall;
- depositing a film on the patterned film to fill the at least one feature and extend above the top surface of the patterned film;
- recessing the film to lower a top of the film to a height equal to or below the top surface of the patterned film to form a recessed film;
- converting the recessed film to a tungsten film;
- and
- expanding the tungsten film to form pillars extending from the at least one feature.
3 more elements
A processing method comprising:
- providing a substrate surface with a patterned film forming at least one feature, the at least one feature extending a depth from a top surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall;
- exposing the substrate surface to a silicon precursor comprising one or more of silane, disilane, trisilane or tetrasilane to deposit an amorphous silicon film by thermal decomposition on the substrate surface to fill the at least one feature and extend above the substrate surface;
- etching the amorphous silicon film with a hydrogen plasma or hydrogen radicals to recess the amorphous silicon film to lower a top of the amorphous silicon film to a height equal to or below the top surface of the patterned film to form a recessed amorphous silicon film;
- exposing the recessed amorphous silicon film to a tungsten precursor to react with the recessed amorphous silicon film to convert substantially all of the amorphous silicon film to a tungsten film;
- and
- oxidizing the tungsten film to expand the tungsten film to form tungsten pillars that extending substantially straight up from the at least one feature.
3 more elements
A processing method comprising:
- providing a substrate surface with a patterned film forming at least one feature, the at least one feature extending a depth from a top surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall;
- exposing the substrate surface to a silicon precursor comprising one or more of silane, disilane, trisilane or tetrasilane to deposit an amorphous silicon film by thermal decomposition on the substrate surface to fill the at least one feature and extend above the top surface of the patterned film, the thermal decomposition occurring without a silicon co-reactant and at a temperature in the range of about 300° C. to about 550° C. without a plasma or at a temperature in the range of about −100° C. to about 50° C. with a plasma;
- etching the amorphous silicon film with a hydrogen plasma or hydrogen radicals to recess the amorphous silicon film to lower a top of the amorphous silicon film to a height equal to or below the top surface of the patterned film to form a recessed amorphous silicon film;
- exposing the recessed amorphous silicon film to a tungsten precursor comprising WF6 at a temperature in the range of about 300° C. to about 550° C. to react with the recessed amorphous silicon film to convert substantially all of the amorphous silicon film to a tungsten film;
- and
- oxidizing the tungsten film to expand the tungsten film to form tungsten pillars that extending substantially straight up from the at least one feature.
3 more elements
Dependencies are inferred from the claim text.