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US 2018/0323066 A1Published application
Field-effect transistors with a body pedestal
AssigneeGlobalfoundries Inc.
InventorsMichel J. Abou-Khalil, Steven M. Shank, Alvin J. Joseph, Michael J. Zierak
Life of this patent
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Abstract
Device structures for a field-effect transistor and methods of forming a device structure for a field-effect transistor. A trench isolation region is formed in a substrate, and surrounds a semiconductor body. An undercut cavity region is also formed in the substrate. The undercut cavity region extends laterally beneath the semiconductor body and defines a body pedestal as a section of the substrate that is arranged in vertical alignment with the semiconductor body.
Claims20
A structure comprising:
- a first trench isolation region in a substrate, the first trench isolation region surrounding a semiconductor body;
- and
- a body pedestal arranged in vertical alignment with the semiconductor body, the body pedestal surrounded by an undercut cavity region in the substrate that extends laterally beneath the semiconductor body.
A method comprising:
- forming a first trench isolation region in a substrate, wherein the first trench isolation region surrounds a semiconductor body;
- and
- forming an undercut cavity region in the substrate that extends laterally beneath the semiconductor body and defines a body pedestal as a first section of the substrate that is arranged in vertical alignment with the semiconductor body.
Dependencies are inferred from the claim text.