Bevel etch profile control

A method comprising:

• placing a substrate on a cover plate inside of a processing chamber, the substrate having a dielectric layer, a center, and a bevel edge, wherein the processing chamber comprises a mask disposed above the substrate and an edge ring disposed under the substrate;
• raising the edge ring to contact the mask;
• flowing a process gas comprising an etchant along an outer surface of the mask and to the bevel edge, wherein the process gas is ignited to produce a plasma;
• exposing an upper surface of the substrate at the bevel edge to the process gas;
• and
• flowing a purge gas from two or more holes positioned on an inner surface of the mask to the center of the substrate and adjacent a top of the substrate.

A method comprising:

• placing a substrate on a cover plate inside of a processing chamber, the substrate has a center and a bevel edge and comprises a dielectric layer thereon, wherein the processing chamber comprises a mask disposed above the substrate;
• flowing a process gas along an outer surface of the mask and to the bevel edge, wherein the process gas comprises an etchant comprising N2, O2, NF3, Ar, He, or any combination thereof, wherein the process gas is ignited to produce a plasma;
• exposing an upper surface of the substrate at the bevel edge to the process gas and etching the dielectric layer;
• and
• flowing a purge gas from two or more holes positioned on an inner surface of the mask to the center of the substrate and adjacent a top of the substrate.