Self-Aligned Triple Patterning Process Utilizing Organic Spacers

A method for processing a substrate, comprising:

• providing the substrate with a plurality of first patterned structures;
• forming a plurality of organic spacers adjacent to the plurality of first patterned structures;
• forming a plurality of second spacers adjacent to the plurality of organic spacers;
• removing the plurality of organic spacers after forming the plurality of second spacers,
• wherein after removing the plurality of organic spacers, the plurality of first patterned structures and the plurality of second spacers together forming a masking layer which has masking layer structures having a pitch that is 26 nm or less.

A method for performing a self-aligned triple patterning pitch splitting masking process, comprising:

• providing a plurality of mandrels on a substrate;
• forming a plurality of organic spacers on the substrate;
• forming a plurality of second spacers on the substrate, at least one of the plurality of organic spacers being located between at least one of the plurality of mandrels and at least one of the plurality of second spacers;
• performing an organic spacer etch removal process, the plurality of mandrels and the plurality of second spacers remaining on the substrate after the organic spacer etch removal process;
• and
• after the organic spacer etch removal process, utilizing the plurality of mandrels and the plurality of second spacers as a self-aligned triple patterning pitch splitting mask for masking at least one layer of the substrate during at least one subsequent etch step.