Methods for forming silicon-containing epitaxial layers and related semiconductor device structures

A method of forming a doped silicon epitaxial layer by chemical vapor deposition, the method comprising:

• heating a substrate disposed within a reaction chamber to a temperature of less than approximately 950° C.;
• exposing the substrate to a gas mixture, wherein the gas mixture comprises:
• a first silicon source comprising silane;
• a second silicon source comprising a chlorinated silicon source;
• a halogen source;
• and
• a dopant source;
• and
• depositing a doped silicon epitaxial layer on the substrate;
• wherein the dopant concentration within the doped silicon epitaxial layer is greater than 3×1021 atoms per cubic centimeter.