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US 2018/0323058 A1Published application
Method for post chemical mechanical polishing clean
AssigneeUnited Microelectronics Corp.
InventorsYi-Liang Ye, Kuang-Hsiu Chen, Chun-Wei Yu, Yu-Ren Wang
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Abstract
A method for post chemical mechanical polishing clean is provided in the present invention, which include the steps of providing a substrate, performing a chemical mechanical polishing process, and performing a plurality of cleaning processes sequentially substrate using solutions of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) with different ratios and at different temperatures.
Claims8
A method for post chemical mechanical polishing clean, comprising:
- providing a substrate;
- performing a chemical mechanical polishing process on said substrate;
- and
- performing two or more cleaning processes sequentially on said substrate using solutions of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) at different temperatures after said chemical mechanical polishing process, wherein volume ratios of H2SO4 to H2O2 in said solutions vary gradiently in different said cleaning processes, and performing said two or more cleaning processes comprises:
- performing a first cleaning process by applying said solutions with volume ratio 2:1 of H2SO4 to H2O2 at an equilibrium temperature 230° C.;
- performing a second cleaning process by applying said solutions with volume ratio 4:1 of H2SO4 to H2O2 at an equilibrium temperature 210° C.;
- and
- performing a third cleaning process by applying said solutions with volume ratio 9:1 of H2SO4 to H2O2 at an equilibrium temperature 170° C.
5 more elements
7-8. (canceled)
A method for post chemical mechanical polishing clean, comprising:
- providing a substrate;
- performing a chemical mechanical polishing process on said substrate;
- and
- performing two or more cleaning processes sequentially on said substrate using solutions of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) at different temperatures after said chemical mechanical polishing process, wherein volume ratios of H2SO4 to H2O2 in said solutions vary gradiently in different said cleaning processes, and performing said two or more cleaning processes comprises:
- performing a first cleaning process by applying said solutions with volume ratio 9:1 of H2SO4 to H2O2 at an equilibrium temperature 170° C.;
- performing a second cleaning process by applying said solutions with volume ratio 4:1 of H2SO4 to H2O2 at an equilibrium temperature 210° C.;
- and
- performing a third cleaning process by applying said solutions with volume ratio 2:1 of H2SO4 to H2O2 at an equilibrium temperature 230° C.
5 more elements
Dependencies are inferred from the claim text.