Chamber with vertical support stem for symmetric conductance and rf delivery

A system for increasing uniformity in conductance within a plasma chamber, comprising:

• a side wall;
• a chuck support column, wherein the chuck support column includes a hollow space;
• a lower electrode situated within an enclosure surrounded by the side wall, wherein the lower electrode is supported by the chuck support column;
• a transition flange located below and adjacent to the side wall, wherein the transition flange includes a transition flange opening, wherein the transition flange opening is located coaxial with respect to the lower electrode such that the chuck support column passes via the transition flange opening and reduces impedance to the conductance of remnant materials within the plasma chamber from the lower electrode to a plurality of vacuum openings formed within the transition flange;
• a radio frequency (RF) rod extending via the transition flange opening and the hollow space of the chuck support column to the lower electrode within the plasma chamber to provide RF power to the lower electrode;
• and
• a plurality of baffles located on top of the plurality of vacuum openings, wherein the plurality of baffles are configured to vertically move with respect to the plurality of vacuum openings to control the conductance and a pressure at a region adjacent to the transition flange, wherein the plurality of baffles are symmetrically located with respect to a center axis of the RF rod.

A system for increasing uniformity in conductance within a plasma chamber, comprising:

• a side wall;
• a chuck support column, wherein the chuck support column includes a hollow space;
• an inductively coupled plasma (ICP) circuit assembly placed on top of the side wall;
• a lower electrode situated within an enclosure surrounded by the side wall, wherein the lower electrode is supported by the chuck support column;
• a transition flange located below and adjacent to the side wall, wherein the transition flange includes a transition flange opening, wherein the transition flange opening is located coaxial with respect to the lower electrode such that the chuck support column passes via the transition flange opening and reduces impedance to the conductance of remnant materials within the plasma chamber from the lower electrode to a plurality of vacuum openings formed within the transition flange;
• a radio frequency (RF) rod extending via the transition flange opening and the hollow space of the chuck support column to the lower electrode within the plasma chamber to provide RF power to the lower electrode;
• and
• a plurality of baffles located on top of the plurality of vacuum openings, wherein the plurality of baffles are configured to vertically move with respect to the plurality of vacuum openings to control the conductance and a pressure at a region adjacent to the transition flange, wherein the plurality of baffles are symmetrically located with respect to a center axis of the RF rod.

A system for increasing uniformity in conductance within a plasma chamber, comprising:

• a side wall;
• a chuck support column, wherein the chuck support column includes a hollow space;
• a capacitively coupled plasma (CCP) circuit assembly placed on top of the side wall;
• a lower electrode situated within an enclosure surrounded by the side wall, wherein the lower electrode is supported by the chuck support column;
• a transition flange located below and adjacent to the side wall, wherein the transition flange includes a transition flange opening, wherein the transition flange opening is located coaxial with respect to the lower electrode such that the chuck support column passes via the transition flange opening and reduces impedance to the conductance of remnant materials within the plasma chamber from the lower electrode to a plurality of vacuum openings formed within the transition flange;
• a radio frequency (RF) rod extending via the transition flange opening and the hollow space of the chuck support column to the lower electrode within the plasma chamber to provide RF power to the lower electrode;
• and
• a plurality of baffles located on top of the plurality of vacuum openings, wherein the plurality of baffles are configured to vertically move with respect to the plurality of vacuum openings to control the conductance and a pressure at a region adjacent to the transition flange, wherein the plurality of baffles are symmetrically located with respect to a center axis of the RF rod.