US 2018/0323042 A1 · METHOD TO MODULATE THE WAFER EDGE SHEATH IN A PLASMA PROCESSING CHAMBER

Abstract

The present disclosure generally relates to methods of and apparatuses for controlling a plasma sheath near a substrate edge. The apparatus includes an auxiliary electrode that may be positioned adjacent an electrostatic chuck. The auxiliary electrode is recursively fed from a power source using equal length and equal impedance feeds. The auxiliary electrode is vertically actuatable, and is tunable with respect to ground or other frequencies responsible for plasma generation. Methods of using the same are also provided.

Claims20

Dependent claims

A processing chamber, comprising:

a chamber body;
a substrate support disposed within the chamber body;
a recursive distribution assembly disposed within the substrate support;
an edge ring assembly disposed within the substrate support and coupled to the recursive distribution assembly, the edge ring assembly including an electrically conductive electrode;
an insulating support positioned on the substrate support above the electrode;
and
a first silicon ring disposed on the insulating support.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/957,054Filed 19 Apr 2018

Priority

2 May 2017

Published

8 Nov 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H01J 37/32642
Mechanical discharge control means: focus rings
H10P 72/0421
For etching: for drying etching
H10P 72/72
For supporting or gripping: using electrostatic chucks
H10P 72/722
Using electrostatic chucks: details of electrostatic chucks

Method to modulate the wafer edge sheath in a plasma processing chamber

Life of this patent

Method to modulate the wafer edge sheath in a plasma processing chamber

Life of this patent

Abstract

Claims20