Thermal budget enhancement of a magnetic tunnel junction

A method of creating a magnetic tunneling junction (MTJ) stack, the method comprising:

• forming an antiferromagnetic layer;
• forming a first ferromagnetic layer;
• forming a diffusion barrier on the first ferromagnetic layer;
• and
• forming a second ferromagnetic layer.

A computing device comprising:

• a processor mounted on a substrate;
• a communications logic unit within the processor;
• a memory within the processor;
• a graphics processing unit within the computing device;
• an antenna within the computing device;
• a display on the computing device;
• a battery within the computing device;
• a power amplifier within the processor;
• a voltage regulator within the processor;
• and
• a non-volatile memory;
• wherein the non-volatile memory comprises:
• a magnetic tunneling junction (MTJ) stack comprising:
• an antiferromagnetic layer comprising platinum manganese (PtMN);
• a ferromagnetic layer;
• and
• a diffusion barrier, the diffusion barrier comprising a material that is a barrier to Mn diffusion, the ferromagnetic layer residing between the antiferromagnetic layer and the diffusion barrier;
• wherein the diffusion barrier comprises a refractory metal.