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US 2018/0322940 A1Published application
Memory system and operation method of the same
AssigneeSK hynix Inc.
InventorsYong-Ju Kim, Dong-Gun Kim, Do-Sun Hong
Life of this patent
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Abstract
A method for operating a memory system includes: reading a data from a memory device; detecting and correcting an error of the data; when the error of the data is equal to or greater than a threshold value, deciding an address corresponding to memory cells from which the data is read in the memory device as a rewrite-requiring address; and rewriting the data of the memory cell corresponding to the rewrite-requiring address.
Claims17
A method for operating a memory system, comprising:
- reading a data from a memory device;
- detecting and correcting an error of the data;
- when the error of the data is equal to or greater than a threshold value, deciding an address corresponding to memory cells from which the data is read in the memory device as a rewrite-requiring address;
- and
- rewriting the data of the memory cells corresponding to the rewrite-requiring address.
2 more elements
A memory system, comprising:
- a memory device including a plurality of memory cells;
- and
- a memory controller suitable for reading a data from the memory device, and when an error of the data is equal to or greater than a threshold value, deciding an address corresponding to memory cells from which the data is read as a rewrite-requiring address.
Dependencies are inferred from the claim text.