Memory device including multiple select lines and control lines having different vertical spacing

A method comprising:

• forming a first group of dielectric materials alternating with a second group of dielectric materials over a substrate, including forming each dielectric material of the first group of dielectric materials to have a first thickness;
• forming a first additional group of dielectric materials alternating with a second additional group of dielectric materials over the first and second groups of dielectric materials, including forming each dielectric material of the third group of dielectric materials to have a second thickness greater than the first thickness;
• forming pillars of materials through the first and second groups of dielectric materials and the first and second additional groups of dielectric materials;
• removing at least a portion of the second group of dielectric materials and least a portion of the second additional group of dielectric materials to form vacancies at the portion of the second group of dielectric materials that were removed and the portion of the second additional group of dielectric materials that were removed;
• and
• forming a conductive material in the vacancies.