Integrated Electro-Optic Modulator and Method of Improving 3dB Bandwidth Thereof by Means of Substrate Hollowing Out

An integrated electro-optic modulator, comprises a substrate material, a buried layer of silicon dioxide, an active area, a covering layer of silicon dioxide, and two electrodes,

• wherein the substrate material is located at the bottom layer and covered with the buried layer of silicon dioxide;
• the active area is disposed at the center of the buried layer of silicon dioxide;
• the covering layer of silicon dioxide covers the active area on the buried layer of silicon dioxide;
• the two electrodes are disposed on the buried layer of silicon dioxide;
• the active area is shaped like a step with the middle protruding;
• a plurality of hollowing out windows are etched in the buried layer of silicon dioxide;
• the two electrodes are connected to the step surface of the active area via two through holes, respectively;
• the substrate material comprises a hollowing out area and a non-hollowing out area;
• the hollowing out area is an overlapping part of an electric field intensity distribution area on the cross section of a modulation area of the integrated electro-optic modulator and the substrate material, and the rest of the substrate material is the non-hollowing out area.