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US 2018/0321329 A1Published application
Structure and System for Simultaneous Sensing a Magnetic Field and Mechanical Stress
AssigneeAllegro MicroSystems, LLC
InventorsSteven Kosier, Gregory Delmain
Life of this patent
Estimating the term…
Abstract
A structure having collocated magnetic field sensing elements can be used to simultaneously determine magnetic field and mechanical stress. A primary magnetic field sensing element generates a primary signal responsive to a magnetic field and a secondary magnetic field sensing element generates a secondary signal responsive to mechanical stress. A system includes a stress compensation module to receive the primary and signals, and to compensate for mechanical stress in the primary signal.
Claims17
1-13. (canceled)
A dual Hall element comprising:
- a substrate having a bottom surface and a top surface;
- an N-type epitaxial layer disposed over the substrate top surface, the epitaxial layer having a top surface and a bottom surface;
- a barrier structure disposed over the substrate and extending perpendicular from the epitaxial layer top surface so as to form a barrier to electrical charges within the epitaxial layer and resulting in a bounded region of the epitaxial layer having a generally octagonal shape;
- a P-well region diffused into the epitaxial layer;
- and
- a plurality of pickups implanted and diffused into the epitaxial layer, opposing pairs of the plurality of pickups separated by the P-well region, each one of the plurality of pickups comprising an N+ type diffusion,
- wherein a first set of the plurality of pickups is operable to form a first Hall element and a second different set of the plurality of pickups is operable to form a second Hall element.
4 more elements
A dual Hall element comprising:
- a substrate having a bottom surface and a top surface;
- an N-type epitaxial layer disposed over the substrate top surface, the epitaxial layer having a top surface and a bottom surface;
- a barrier structure disposed over the substrate and extending perpendicular from the epitaxial layer top surface so as to form a barrier to electrical charges within the epitaxial layer;
- a P-well region diffused into the epitaxial layer;
- a first plurality of pickups implanted and diffused into the epitaxial layer, opposing pairs of the first plurality of pickups separated by the P-well region, each one of the first plurality of pickups comprising an N+ type diffusion;
- and
- a second plurality of pickups implanted and diffused into the P-well region, each one of the second plurality of pickups comprising an P+ type diffusion,
- wherein the first plurality of pickups is operable to form a first Hall element and the second plurality of pickups is operable to form a second Hall element.
5 more elements
A dual Hall element comprising:
- a bottom structure including:
- a substrate having a bottom surface and a top surface;
- an N-type epitaxial layer disposed over the substrate top surface, the epitaxial layer having a top surface and a bottom surface;
- a barrier structure disposed over the substrate and extending perpendicular from the epitaxial layer top surface so as to form a barrier to electrical charges within the epitaxial layer;
- a P-well region diffused into the epitaxial layer;
- and
- a first plurality of pickups implanted and diffused into the epitaxial layer, opposing pairs of the first plurality of pickups separated by the P-well region, each one of the first plurality of pickups comprising an N+ type diffusion;
- and
- a top structure electrically isolated from the bottom structure via an isolation region, the top structure including:
- a top layer;
- and
- a second plurality of pickups implanted and diffused into the top layer,
- wherein the first plurality of pickups is operable to thrill a first Hall element and the second plurality of pickups is operable to form a second Hall element.
10 more elements
A dual Hall element comprising:
- a substrate having a bottom surface and a top surface;
- an P-type epitaxial layer disposed over the substrate top surface, the epitaxial layer having a top surface and a bottom surface;
- an N-well region diffused into the epitaxial layer;
- a P-well region diffused into the N-well region;
- a first plurality of pickups implanted and diffused into the N-well region, opposing pairs of the first plurality of pickups separated by the P-well region, each one of the first plurality of pickups comprising an N+ type diffusion;
- and
- a second plurality of pickups implanted and diffused into the P-well region, each one of the second plurality of pickups comprising an P+ type diffusion,
- wherein the first plurality of pickups is operable to form a first Hall element and the second plurality of pickups is operable to form a second Hall element.
5 more elements
A dual Hall element comprising:
- a substrate having a bottom surface and a top surface;
- an N-type epitaxial layer disposed over the substrate top surface;
- a first planar Hall element disposed within or over the epitaxial layer, the first planar Hall element having a first plurality of pickups with a first center between the first plurality of pickups;
- and
- a second planar Hall element disposed within or over the epitaxial layer, the second planar Hall element having a second different plurality of pickups with a second center between the second plurality of pickups, wherein the first and second centers are substantially collocated.
2 more elements
Dependencies are inferred from the claim text.