Igbt temperature sensor correction apparatus and temperature sensing correction method using the same
AssigneesHyundai Motor Company, Kia Motors Corporation
InventorsJi Woong Jang, Kang Ho Jeong, Ki Jong Lee, Sang Cheol Shin
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Abstract
An Insulated Gate Bipolar Transistor (IGBT) temperature sensor correction apparatus includes an Insulated Gate Bipolar Transistor (IGBT); a temperature sensor having a sensing diode; and a process variation sensor having an internal resistor.
Claims19
An Insulated Gate Bipolar Transistor temperature sensor correction apparatus comprising:
- an Insulated Gate Bipolar Transistor (IGBT);
- a temperature sensor having a sensing diode;
- and
- a process variation sensor having an internal resistor.
A temperature sensing correction method using an Insulated Gate Bipolar Transistor (IGBT) temperature sensor, the method comprising:
- changing, by a driver integrated circuit (IC), a value of a current allocated to a temperature sensor according to a resistance value of an internal resistor of a process variation sensor;
- correcting a voltage value in response to the changed current value allocated to the temperature sensor;
- and
- sensing, by the temperature sensor, the corrected voltage.
A non-transitory computer readable medium containing program instructions for performing a temperature sensing correction method using an Insulated Gate Bipolar Transistor (IGBT) temperature sensor, the program instructions when executed by a processor causing the processor to:
- change a value of a current allocated to a temperature sensor according to a resistance value of an internal resistor of a process variation sensor;
- and
- correct a voltage value in response to the changed current value allocated to the temperature sensor
- wherein the corrected voltage is sensed by the temperature sensor.
Dependencies are inferred from the claim text.