Zinc Oxide-Based Mask For Selective Reactive Ion Etching
AssigneeInternational Business Machines Corporation
InventorsJoel P de Souza, Yun Seog Lee, Devendra K Sadana
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Abstract
Embodiments herein describe techniques for forming a zinc oxide mask used when performing RIE. In one embodiment, the zinc oxide mask is near-amorphous which means the zinc oxide has a grain size that is less than 50 nanometers. In contrast, metal masks such as aluminum, chromium, and titanium have a less robustness to ME process. When performing RIE, the edges of these ME masks can form pits or holes which harm the features of the underlying substrate. However, a near-amorphous zinc oxide ME mask is less susceptible to pitting, and thus, can improve the geometry of the etched features.
Claims20
A method, comprising:
- forming a zinc oxide layer on a first layer of a semiconductor wafer, wherein the zinc oxide layer has a grain size smaller than 50 nanometers;
- patterning the zinc oxide layer to form a zinc oxide reactive ion etching (RIE) mask on the first layer;
- and
- performing RIE to selectively remove an unmasked portion of the first layer.
A semiconductor wafer, comprising:
- a first layer comprising silicon;
- and
- a RIE mask contacting the first layer and comprising zinc oxide, wherein the zinc oxide has a grain size smaller than 50 nanometers.
A method, comprising:
- forming a RIE mask on a substrate using a deposition process with a temperature less than or equal to 150 degrees Celsius, wherein the RIE mask comprises near-amorphous zinc oxide;
- and
- performing RIE to remove an unmasked portion of the substrate without removing the RIE mask.
Dependencies are inferred from the claim text.