Method for improved semiconductor processing equipment tool pedestal / pad vibration isolation and reduction

A system for eliminating or substantially reducing process-inhibiting vibrations within a high-precision semiconductor device fabrication facility, comprising:

• a hybrid tool pedestal system supporting a high-precision semiconductor device fabrication equipment within a building having a building structure susceptible to vibration transmission and exposed to and susceptible to transmitting process-inhibiting vibrations;
• said hybrid tool pedestal system for positioning on a raised floor for structurally separating said hybrid tool pedestal from a building floor for providing a first portion of vibration isolation between the high-precision semiconductor device fabrication equipment and the building floor, said hybrid tool pedestal system comprising a plurality of base structures for positioning said hybrid tool pedestal system on said raised floor and an elevated structure for providing structural support and separating a high-precision semiconductor device fabrication equipment positioned on said elevated structure from said plurality of base structures;
• a plurality of first vibration isolation pads for separating said plurality of base structures from said raised floor, said plurality of first vibration isolation pads comprising an adhesive pad, caulking, or a combination of adhesive pads and caulking;
• a plurality of first vertical support structures positioned as a portion of said elevated structure and separating an upper structure of said elevated structure from at least selected ones of said plurality of base structures, said selected ones of said plurality of first vertical support structures further comprising a hollow portion capable of being filled;
• a vibration absorbing foam filling at least a subset of said hollow portions for absorbing vibrations transmitted to said first vertical support structures;
• a second vibration isolation pad structure comprising an adhesive pad, caulking, or a combination of adhesive pads and caulking separating said plurality of first vertical support structures from said upper structure of said elevated structure;
• wherein said first vibration isolation pads, said vibration absorbing foam, and said second vibration isolation pad coordinate to eliminate or substantially reduce the ability of vibrations from the building floor to reach the high-precision semiconductor device fabrication equipment operating on said upper surface of said elevated structure;
• and
• a vertical structural beam further separating said second isolation pad from said upper structure, said vertical structural beam connecting to said upper structure at a first joint and to said second isolation pad at a second joint;
• and
• a vibration frequency isolation structure in the form of either an adhesive pad, caulking, or a combination of adhesive pad and caulking at said first joint for vibration isolating said upper structure from said vertical structural beam and at said second joint for vibration isolating said vertical structural beam from said second isolation pad for further preventing vibration from process inhibiting vibrations at the building floor from affecting precision operation of the high-precision semiconductor device fabrication equipment on said upper structure, and further
• a heavy mass block associated between said plurality of base structures and said raised floor for vibration and sound reduction, said heavy mass block comprising a first layer of sound dampening adhesive, a reinforced concrete block connecting to said first layer of sound dampening adhesive, a second layer of sound dampening adhesive position on said reinforced concrete block opposite said first layer of sound dampening adhesive, and a block of porous high strength metal connecting to said second layer of sound dampening adhesive, said first layer of sound dampening adhesive positioned between the building floor and said reinforced concrete block for first reducing vibration induced deflection from the building floor to said concrete block, said second layer of sound dampening adhesive for further reducing deflection transmitted from said reinforced concrete block to said porous high strength metal block, wherein deflection and vibration carried from a waffle concrete floor to the high-precision semiconductor device fabrication equipment becomes effectively isolated;
• and further
• an electromagnetic interference (EMI) barrier on said heavy mass block for insulating or absorbing EMI for preventing EMI frequencies from adversely affecting operation of the high-precision semiconductor device fabrication equipment:
• and further
• a degausser on said high-precision semiconductor device fabrication equipment for removing magnetic arc blow associated with said EMI barrier.

A high-precision semiconductor device fabrication facility having eliminated or substantially reduced process-inhibiting vibrations there within, comprising:

• a plurality of hybrid tool pedestal structures for supporting high-precision semiconductor device fabrication equipment and providing vibration reduction spacing between a floor and an upper surface of a plurality of elevated structures, selected ones of said plurality of elevated structures further comprising:
• a high-precision semiconductor device fabrication facility comprising a building having a building floor susceptible to vibration transmission, wherein said building may be exposed to and susceptible to transmitting process-inhibiting vibrations;
• a hybrid tool pedestal system supporting a high-precision semiconductor device fabrication equipment;
• said hybrid tool pedestal system on a raised floor, said raised floor for being structurally separated from the building floor for providing a first portion of vibration isolation between the high-precision semiconductor device fabrication equipment and the building floor, said hybrid tool pedestal system comprising a plurality of base structures for positioning said hybrid tool pedestal system on said raised floor and an elevated structure for providing structural support and separating a high-precision semiconductor device fabrication equipment positioned on said elevated structure from said plurality of base structures;
• a plurality of first vibration isolation pads, separating said plurality of base structures from said raised floor, said plurality of first vibration isolation pads comprising an adhesive pad, caulking, or a combination of adhesive pads and caulking;
• a plurality of first vertical support structures positioned as a portion of said elevated structure and separating an upper structure of said elevated structure from at least selected ones of said plurality of base structures, said selected ones of said plurality of first vertical support structures further comprising a hollow portion capable of being filled;
• a vibration absorbing foam filling at least a subset of said hollow portions for absorbing vibrations transmitted to said first vertical support structures;
• a second vibration isolation pad comprising an adhesive pad, caulking, or a combination of adhesive pads and caulking for separating said plurality of first vertical support structures from said upper structure using;
• wherein said first vibration isolation pads, said vibration absorbing foam, and said second vibration isolation pad coordinate to eliminate or substantially reduce the ability of vibrations from the building floor to reach high-precision semiconductor device fabrication equipment operating on said upper surface of said elevated structure;
• and
• a vertical structural beam further separating said second isolation pad from said upper structure, said vertical structural beam connecting to said upper structure at a first joint and to said second isolation pad at a second joint;
• and
• vibration frequency isolation structure in the form of either an adhesive pad, caulking, or a combination of adhesive pad and caulking at said first joint for vibration isolating said upper structure from said vertical structural beam and at said second joint for vibration isolating said vertical structural beam from said second isolation pad for further preventing vibration isolating said semiconductor device fabrication process inhibiting vibrations at the building floor from affecting precision operation of the high-precision semiconductor device fabrication equipment on said upper structure;
• and further
• an electromagnetic interference (EMI) barrier on a heavy mass block for insulating or absorbing EMI for preventing EMI frequencies from adversely affecting operation of the high-precision semiconductor device fabrication equipment:
• and further
• a degausser on said high-precision semiconductor device fabrication equipment for removing magnetic arc blow associated with said EMI barrier.