FDSOI LDMOS Semiconductor Device
AssigneeBroadcom Corporation
InventorsShom PONOTH, Akira Ito, Qing Liu
Life of this patent
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Abstract
Semiconductor devices are provided that use both silicon on insulator region and bulk region of a fully depleted silicon on insulator (FDSOI) device. For example, a semiconductor device includes a drain region that is disposed above a first type well and a first drain extension region that is disposed above the first type well and laterally spaced apart from the drain region. The semiconductor device further includes a second drain extension region that is disposed above the first type well and is laterally spaced apart from the drain region and the first drain extension region. The semiconductor device further includes a source region disposed above a second type well and laterally spaced apart from the second drain extension.
Claims21
A semiconductor device, comprising:
- a drain region disposed above a first type well;
- a first drain extension region disposed above the first type well and laterally spaced apart from the drain region;
- a second drain extension region disposed above the first type well and laterally spaced apart from the drain region and the first drain extension region;
- and
- a source region disposed above a second type well and laterally spaced apart from the second drain extension.
A semiconductor device, comprising:
- an extended drain region comprising:
- a drain region disposed above a first type well;
- a first drain extension region disposed above the first type well;
- and
- a second drain extension region disposed above the first type well,
- wherein the drain region, the first drain extension region, and the second drain extension region are laterally spaced apart from each other, and
- wherein the first drain extension region is electrically coupled with the second drain extension region;
- a source region disposed above a second type well and laterally spaced apart from the extended drain region;
- and
- a channel layer disposed above the second type well and disposed laterally between the source region and the extended drain region.
(canceled)
Dependencies are inferred from the claim text.