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US 2018/0122463 A1Published application
Method, system and device for non-volatile memory device operation
AssigneeArm Limited
InventorsAzeez Jennudin Bhavnagarwala, Piyush Agarwal, Akshay Kumar
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Abstract
Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain.
Claims19
A device comprising:
- a circuit to generate a reference current;
- a circuit to generate a read voltage to be applied to terminals of a correlated electron switch (CES) element in a read operation, the CES element being capable of being placed in a high impedance or insulative state responsive to application of a programming signal to the terminals of the CES element having a critical voltage magnitude and imparting a critical current density magnitude in the CES element;
- a circuit to combine a signal current from a bitline coupled to the CES element with the reference current at a node;
- a circuit to detect an impedance state of the CES element during the read operation based, at least in part, on a net charge at the node;
- and
- one or more conductive elements configured to limit a current density in the CES element during the read operation to enable a magnitude of the read voltage to equal or exceed the critical voltage magnitude while inhibiting a transition of the CES element from a low impedance or conductive state to the high impedance or insulative state.
3 more elements
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A method comprising:
- generating a reference current;
- applying a read voltage to terminals of a correlated electron switch (CES) element, the CES element being capable of being placed in a high impedance or insulative state responsive to application of a programming signal to the terminals of the CES element having a critical voltage magnitude and imparting a critical current density magnitude in the CES element;
- combining, during application of the read voltage to the terminals of the CES element, a signal current from a bitline coupled to the CES element with the reference current at a node;
- limiting a current density in the CES element during application of the read voltage to the terminals of the CES element to enable a magnitude of the read voltage to equal or exceed the critical voltage magnitude while inhibiting a transition of the CES element from a low impedance or conductive state to the high impedance or insulative state;
- and
- detecting an impedance state of the non-volatile memory element based, at least in part, on a net charge at the node.
3 more elements
(canceled)
Dependencies are inferred from the claim text.