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US 2018/0027648 A1Published application
Interconnect structure and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJiun-Yi WU, Chien-Hsun LEE, Chewn-Pu JOU, Fu-Lung HSUEH
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Abstract
A method for manufacturing an interconnect structure is provided. The method includes the following steps. An opening is through a substrate. A low-k dielectric block is formed in the opening. At least one first via is formed through the low-k dielectric block. A first conductor is formed in the first via.
Claims20
A method comprising:
- forming an opening through a substrate;
- forming a low-k dielectric block in the opening;
- forming at least one first via through the low-k dielectric block;
- and
- forming a first conductor in the first via.
2 more elements
A method comprising:
- forming an opening in a substrate;
- forming a dielectric block in the opening;
- forming at least one first via in the dielectric block;
- forming a first conductor in the first via;
- forming a dielectric layer over the substrate and the first conductor;
- forming at least one second via in the dielectric layer;
- and
- forming a second conductor in the second via, such that the second conductor is electrically connected to the first conductor.
5 more elements
A method comprising:
- forming an opening in a substrate;
- forming a shielding element on a sidewall of the opening;
- forming a dielectric block in the opening, such that the dielectric block is surrounded by the shielding element, wherein the dielectric block has a lower dielectric constant than the substrate;
- forming at least one first via in the dielectric block;
- and
- forming a first conductor in the first via.
3 more elements
Dependencies are inferred from the claim text.