Hybrid switch including gan hemt and mosfet

An apparatus comprising:

• means for producing (i) a gate drive signal on a gate drive output and (ii) a delayed gate drive signal that is delayed relative to said gate drive signal, wherein said gate drive signal comprises an ON state and an OFF state;
• a first type of electrical switching device having a first gate, a first drain, and a first source;
• a second type of switching device different from said first type of switching device wherein said second type of switching device includes a second gate, a second drain, and a second source, said first type of switching device and said second type of switching device being electrically connected in a parallel arrangement wherein (i) said first drain and said second drain are electrically connected and (ii) said first source and said second source are electrically connected;
• wherein said first gate of said first type of switching device is electrically connected to said producing means to receive said delayed gate drive signal and said second gate of said second type of switching device is electrically connected to said producing means to receive said gate drive signal;
• wherein in said paralleled arrangement said second type of switching device has a source-drain reverse conduction voltage drop that is less than that of said first type of switching device such that when said gate drive signal and said delayed gate drive signal are in said OFF state, a reverse conduction current flow through said first type of switching device is inhibited relative to said second type of switching device.

An apparatus comprising:

• means for producing (i) a gate drive signal on a gate drive output and (ii) a delayed gate drive signal that is delayed relative to said gate drive signal, wherein said gate drive signal comprises an ON state and an OFF state;
• a first type of electrical switching device comprising a wide-bandgap (WBG) device having a first gate, a first drain, and a first source;
• a second type of switching device different from said first type of switching device wherein said second type of switching device includes a second gate, a second drain, and a second source, said first type of switching device and said second type of switching device being electrically connected in a parallel arrangement wherein (i) said first drain and said second drain are electrically connected and (ii) said first source and said second source are electrically connected;
• wherein said first gate of said first type of switching device is electrically connected to said producing means to receive said delayed gate drive signal and said second gate of said second type of switching device is electrically connected to said producing means to receive said gate drive signal;
• wherein in said paralleled arrangement said second type of switching device has a body diode between said second source and said second drain such that when said gate drive signal and said delayed gate drive signal are in said OFF state, a reverse conduction current flow through said second type of switching device is promoted and is inhibited in said first type of switching device;
• and
• wherein when said gate drive signal transitions from said ON state to said OFF state, said producing means delays a transition of said delayed gate drive signal from said ON state to said OFF state such that said second type of switching device is turned off while said first type of switching device remains on.