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US 2018/0026216 A1Published application
Photoelectric conversion device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsHaruhi OOOKA, Atsuko llDA, Hideyuki NAKAO, Kenji TODORI, Takeshi GOTANDA
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Abstract
A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C. R1—(CH2)n—R2 (1) Here, n: 1 to 20, and R1, R2: halogen or SH
Claims12
A method of manufacturing a photoelectric conversion device, comprising:
- preparing a substrate;
- forming a layer on the substrate, the layer including a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1);
- and
- drying the layer under a pressure of 100 Pa or less and a substrate temperature of 40 to 200° C.;
- R1—(CH2)n—R2 (1)
- n:
- 1 to 20
- R1, R2:
- halogen or SH.
6 more elements
Dependencies are inferred from the claim text.