Loading patent…
AssigneesBASF SE, National University of Singapore
InventorsMi ZHOU, Peter K.-H. HO, Lay-Lay CHUA, Png RUI-QI, Wei-Ling SEAH
Estimating the term…
This invention provides a transistor device structure that in-corporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.
A field-effect transistor device, comprising one or a plurality of layers of a patterned gate electrode adjoined to one or a plurality of layers of gate dielectric, which is adjoined to one or a plurality of layers of semiconductor, which is adjoined to a molecularly-thin layer of bonded anions, which is adjoined to one or a plurality of layers of a patterned source and drain electrode array,
A molecularly-thin oxidant-containing layer, comprising bonded anions and oxidant species,
Dependencies are inferred from the claim text.