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US 2018/0026181 A1Published application
Magnetoresistance effect element
AssigneeTDK Corporation
InventorsTomoyuki SASAKI, Katsuyuki NAKADA, Tatsuo SHIBATA
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Abstract
A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0<x≦4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.
Claims9
A magnetoresistance effect element comprising:
- a first ferromagnetic metal layer;
- a second ferromagnetic metal layer;
- and
- a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers,
- wherein the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0<x≦4), and
- wherein A is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.
3 more elements
Dependencies are inferred from the claim text.