Light-Emitting Diode With Transparent Conductive Electrodes For Improvement in Light Extraction Efficiency

A method of fabricating a light-emitting diode device, comprising:

• sequentially stacking a first n-GaAs layer, an n-GaInP layer, a second n-GaAs layer, an n cladding layer, an active layer, a p cladding layer, and a p-type GaP layer on a GaAs substrate;
• forming a p ohmic contact pattern and a transparent conductive metal oxide pattern on the p-type GaP layer;
• forming a p electrode pad on the transparent conductive metal oxide pattern;
• bonding a temporary substrate on the p electrode pad and removing the GaAs substrate, the first n-GaAs layer, and the n-GaInP layer;
• patterning the second n-GaAs layer to form an n-type gallium arsenide (GaAs) plug;
• forming a transparent insulating layer on the n cladding layer and the n-type GaAs plug and patterning the transparent insulating layer to form an n ohmic contact plug aligned with the n-type GaAs plug;
• forming a metal reflection layer on the transparent insulating layer and the n ohmic contact plug and attaching a conductive substrate onto the metal reflection layer;
• and
• removing the temporary substrate.