Method for manufacturing light emitting diode device

A method for manufacturing an LED device comprising:

• forming a laminated semiconductor layer including a GaN layer of a first conductivity type, a GaN-based luminous layer, and a GaN layer of a second conductivity type stacked in this order on a surface of a substrate;
• forming a resist pattern with a predetermined shape on the laminated semiconductor layer;
• subjecting the laminated semiconductor layer to reactive ion etching using the resist pattern as a mask to selectively remove the laminated semiconductor layer so that the GaN layer of the first conductivity type remains to have a predetermined thickness on a surface of the substrate, thereby forming an LED element structure part and an electrode connection region integrated with the GaN layer of the first conductivity type of the structure part on the substrate;
• removing the resist pattern;
• treating the substrate including the LED element structure part and the electrode connection region with a first etching residue removing aqueous solution containing a peroxosulfate, a fluorine-containing compound, and an acid for pH adjustment, and possessing a pH value of 0 to 3;
• forming a protection film on the entire surface of the LED element structure part including the electrode connection region;
• forming a resist pattern in which a part corresponding to part of the GaN layer of the second conductivity type of the LED element structure part, and a part corresponding to part of the electrode connection region are opened on the surface of the protection film, on the LED element structure part including the electrode connection region;
• subjecting the protection film to reactive ion etching using the resist pattern as a mask to selectively remove the protection film, thereby forming a first extraction hole for a second conductivity type electrode in the protection film on the GaN layer of the second conductivity type of the LED element structure part, and forming a second extraction hole for a first conductivity type electrode in the protection film on the electrode connection region;
• removing the resist pattern;
• treating the protection film including the first and the second extraction holes with a second etching residue removing aqueous solution containing a peroxosulfate, a fluorine-containing compound, and an acid for pH adjustment, and possessing a pH value of 0 to 3;
• and
• forming a second conductivity type electrode to be connected to the GaN layer of the second conductivity type of the LED element structure part through the first extraction hole and a first conductivity type electrode to be connected to the electrode connection region through the second extraction hole.