Super-junction schottky diode

A super-junction schottky diode, comprising:

• metalized cathode electrode;
• a N+ substrate;
• an N-type drift region;
• and
• a metalized anode electrode,
• wherein
• said N-type drift region includes a P-type buried layer a P-type column, a P+ heavily doped region an N-type lightly doped region, and a trench,
• the P-type buried layer is below the trench, and as top surface of the P-type buried layer contacts with a bottom surface of the trench,
• the P-type column is located between two adjacent trenches,
• the P+ heavily doped region is located above the P-type column, and a bottom surface of the P+ heavily doped region contacts with a top surface of the P-type column,
• the N-type lightly doped region is located on a side of the trench and in a top surface of the N-type drift region,
• said trench is filled with metal, and the metal together with the N-type lightly doped region form a schottky junction,
• a top surface of the N-type lightly doped region is covered with the metal, and the metal together with the N-type lightly doped region form a schottky junction,
• a top surface of said metal contacts with a bottom surface of the metalized anode electrode, and the P+ heavily doped region contacts the bottom surface of the metalized anode electrode, and
• a junction depth of said P-type buried layer is the same as the that of the P-type column.