Semiconductor device with fin and related methods
AssigneeSTMicroelectronics S.r.l.
InventorsPierre Morin, Nicolas Loubet
Life of this patent
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Abstract
A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, and source and drain regions adjacent the channel region to generate shear and normal strain on the channel region. A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, source and drain regions adjacent the channel region, and a gate over the channel region. The fin may be canted with respect to the source and drain regions to generate shear and normal strain on the channel region.
Claims20
A device, comprising:
- a substrate;
- a plurality of fins on the substrate;
- source and drain regions at ends of each of the plurality of fins, each of the source and drain regions being Y-shaped;
- and
- a channel region in each of the plurality of fins, the channel regions separating the source and drain regions.
A device, comprising:
- a substrate;
- a fin extending from the substrate, the fin having a length along a first direction;
- a source region having a first portion and a second portion, the first portion having a length aligned in a second direction and the second portion having a length aligned in a third direction, the first, second, and third directions being different;
- and
- a drain region having a first portion and a second portion, the first portion having a length aligned in the second direction and the second portion having a length aligned in the third direction, the drain region and the source region being adjacent to ends of the fin.
A device, comprising:
- a substrate;
- a plurality of fins having a length aligned along a first axis;
- a gate structure having a length aligned along a second axis that is oblique to the first axis, the gate structure positioned above the plurality of fins;
- and
- a plurality of source and drain regions that are Y-shaped, each fin of the plurality of fin being adjacent to a source region and a drain region of the plurality of source and drain regions.
Dependencies are inferred from the claim text.