Vertical schottky contact fet
AssigneeInternational Business Machines Corporation
InventorsKarthik Balakrishnan, Kangguo Cheng, Pouya Hashemi, Alexander Reznicek
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Abstract
A semiconductor structure containing a vertical Schottky contact transistor is provided in which the contact resistance as well as the junction resistance is improved. The vertical Schottky contact transistor includes a bottom Schottky contact source/drain structure and a top Schottky contact source/drain structure located at opposing ends of a semiconductor channel region. The bottom Schottky contact source/drain structure includes a base portion and a vertically extending portion.
Claims20
A semiconductor structure comprising:
- a vertical field effect transistor located above a substrate, said vertical field effect transistor comprising:
- a bottom Schottky contact source/drain structure located directly on a surface of said substrate, said bottom Schottky contact source/drain structure comprises a base portion and a vertically extending portion;
- a semiconductor channel region extending vertically upwards from a surface of said base portion of said bottom Schottky contact source/drain structure;
- a top Schottky contact source/drain structure located on a topmost surface of said semiconductor channel region;
- and
- a gate structure located on each side of said semiconductor channel region, wherein said vertically extending portion of said bottom Schottky contact source/drain structure has a topmost surface that is coplanar with a topmost surface of said top Schottky contact source/drain structure.
A semiconductor structure comprising:
- a vertical field effect transistor located above a substrate, said vertical field effect transistor comprising:
- a bottom Schottky contact source/drain structure located directly on a surface of said substrate, said bottom Schottky contact source/drain structure comprises a base portion and a vertically extending portion;
- a semiconductor channel region extending vertically upwards from a surface of said base portion of said bottom Schottky contact source/drain structure;
- a top Schottky contact source/drain structure located on a topmost surface of said semiconductor channel region;
- and
- a gate structure located on each side of said semiconductor channel region, wherein sidewall surfaces of said semiconductor channel region are vertically coincident with sidewall surfaces of said top Schottky contact source/drain structure.
Dependencies are inferred from the claim text.