US 2018/0026131 A1 · SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

Abstract

To suppress current leakage in a semiconductor device having a gate insulating film and a gate electrode. A gate electrode is continuously formed in a film via a gate insulating film on the bottom surface of a trench, the side surfaces of a trench, and the top surfaces of a second n-type layer in the vicinity of the side surfaces of the trench. The ends of the bottom surface of the gate electrode are aligned with the ends of the top surface of the gate insulating film, and the ends of the bottom surface of the gate insulating film are formed in contact with the surfaces of the second n-type layer facing the ends of the bottom surface of the gate electrode. The passivation film covers the entire top surface of the device except the contact holes of the gate electrode and the source electrode.

Claims21

Dependent claims

A semiconductor device comprising:

a semiconductor layer;
a gate insulating film formed on a part of the surface of the semiconductor layer;
a gate electrode formed via the gate insulating film on the surface of the semiconductor layer;
an electrode formed apart from the gate electrode on a part of the surface of the semiconductor layer;
and
a passivation film formed in contact with a region other than a region having the gate insulating film and the electrode thereon of the surface of the semiconductor layer and made of an insulating material different from the material of the gate insulating film,
wherein the ends of the top surface of the gate insulating film are in contact with the bottom surface of the gate electrode, and the side surfaces at the ends of the gate insulating film are in a range of −60° to 60° with respect to a direction perpendicular to the surface in contact with the bottom surface at the ends of the gate insulating film of the semiconductor layer.

4 more elements

A method for producing a semiconductor device comprising a semiconductor layer, a gate insulating film formed on a part of the surface of the semiconductor layer, a gate electrode formed via the gate insulating film on the surface of the semiconductor layer, an electrode formed apart from the gate electrode on a part of the surface of the semiconductor layer, and a passivation film formed in contact with a region other than the region having the gate insulating film and the electrode thereon of the surface of the semiconductor layer and made of an insulating material different from the material of the gate insulating film, the production method comprising:

forming the gate insulating film on the surface of the semiconductor layer;
forming the gate electrode on a predetermined region on the gate insulating film using a mask;
and
etching the gate insulating film while leaving the mask so that the ends of the top surface of the gate insulating film are in contact with the bottom surface of the gate electrode, and so that the side surfaces at the ends of the gate insulating film are in a range of −60° to 60° with respect to a direction perpendicular to the surface in contact with the bottom surface at the ends of the gate insulating film of the semiconductor layer.

1 more element

Dependencies are inferred from the claim text.

Semiconductor device and production method therefor

Life of this patent

Semiconductor device and production method therefor

Life of this patent

Abstract

Claims21