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US 2018/0026118 A1Published application
Multiple step thin film deposition method for high conformality
AssigneeGlobalfoundries Inc.
InventorsNicolas L. Breil, Neal A. Makela, Praneet Adusumilli, Domingo A. Ferrer
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Abstract
During a physical vapor deposition (PVD) process, the ion energy of a depositing species is controlled. By varying the ion energy throughout the process, the degree of conformality of the deposited layer over three-dimensional structures, including the extent to which the deposited layer merges between adjacent structures can be controlled.
Claims21
A method of forming a semiconductor structure comprising:
- forming a plurality of semiconductor fins on a substrate;
- forming a plurality of raised active regions on the semiconductor fins;
- forming a plasma within a vacuum chamber;
- depositing a first portion of a conformal conductive layer over the raised active regions at a first ion energy;
- and
- depositing a second portion of the conformal conductive layer over the first portion at a second ion energy.
3 more elements
A method of forming a semiconductor structure within a vacuum chamber comprising:
- plasma depositing a first portion of a conformal conductive layer over raised regions disposed on a semiconductor substrate at a first ion energy;
- and
- plasma depositing a second portion of the conformal conductive layer over the first portion at a second ion energy.
A semiconductor structure comprising:
- a semiconductor substrate having a plurality of fins formed thereon;
- epitaxial active regions disposed over of the fins;
- and
- a conductive layer disposed over the epitaxial active regions, wherein the conductive layer on an upper surface of the epitaxial active regions has an apex thickness, a turn thickness and a lateral edge thickness, and a coefficient of variation of the apex thickness, turn thickness and lateral edge thickness is 0.1 to 0.45.
1 more element
A method of forming a semiconductor structure comprising:
- forming a plurality of semiconductor fins on a substrate;
- forming a plurality of raised active regions on the semiconductor fins;
- depositing a first portion of a conductive layer over the raised active regions at a first ion energy;
- and
- depositing a second portion of the conductive layer over the first portion at a second ion energy, wherein the oxygen concentration within the deposited layer is less than 500 ppm.
2 more elements
Dependencies are inferred from the claim text.