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US 2018/0026108 A1Published application
Semiconductor device, power circuit, and computer
AssigneeKabushiki Kaisha Toshiba
InventorTatsuo SHIMIZU
Life of this patent
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Abstract
A semiconductor device according to an embodiment includes a nitride semiconductor layer, an insulating layer provided on the nitride semiconductor layer, a first region provided in the nitride semiconductor layer, and a second region which is provided between the first region in the nitride semiconductor layer and the insulating layer, has a higher electric resistivity than the first region, and includes carbon (C).
Claims20
A semiconductor device comprising:
- a nitride semiconductor layer;
- an insulating layer provided on the nitride semiconductor layer;
- a first region provided in the nitride semiconductor layer;
- and
- a second region provided in the nitride semiconductor layer, the second region provided between the first region and the insulating layer, the second region having a higher electric resistivity than the first region, the second region including carbon (C).
2 more elements
A semiconductor device comprising:
- a nitride semiconductor layer;
- an insulating layer provided on the nitride semiconductor layer;
- and
- a region provided in the nitride semiconductor layer, the region provided in an insulating-layer-side portion of the nitride semiconductor layer, the region including at least one atom selected from the group consisting of first atom X, second atom X, and second atom, the first atom X forming a bond with a carbon atom and having a dangling bond, the second atom X forming a bond with a carbon atom and forming a bond with a first atom of at least one element selected from the group consisting of oxygen (O), sulfur (S), selenium (Se), and tellurium (Te), the second atom being one element selected from the group consisting of silicon (Si), germanium (Ge), titanium (Ti), zirconium (Zr), hafnium (Hf), and iron (Fe), the second atom being bonded to a carbon atom, atom X being an atom other than a nitrogen atom forming a crystal structure of the nitride semiconductor layer.
1 more element
A semiconductor device comprising:
- a nitride semiconductor layer;
- an insulating layer provided on the nitride semiconductor layer;
- and
- a region provided in the nitride semiconductor layer, the region provided in an insulating-layer-side portion of the nitride semiconductor layer, the region including at least one atom selected from first atom Y, second atom Y, and third atom Y, the first atom Y having a dangling bond, the second atom Y forming a bond with a first atom of at least one element selected from the group consisting of oxygen (O), sulfur (S), selenium (Se), and tellurium (Te), the third atom Y forming a bond with a second atom of at least one element selected from the group consisting of silicon (Si), germanium (Ge), titanium (Ti), zirconium (Zr), hafnium (Hf), and iron (Fe), atom Y being an atom of at least one element selected from the group consisting of beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), zinc (Zn), and cadmium (Cd).
1 more element
Dependencies are inferred from the claim text.