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US 2018/0026107 A1Published application
Semiconductor device, power circuit, computer, and method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTatsuo Shimizu, Hisashi Saito
Life of this patent
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Abstract
A semiconductor device according to an embodiment includes a nitride semiconductor layer, an insulating layer provided on the nitride semiconductor layer, a first region provided in the nitride semiconductor layer, and a second region which is provided between the first region and the insulating layer in the nitride semiconductor layer and has a higher electric resistivity than the first region.
Claims20
A semiconductor device comprising:
- a nitride semiconductor layer;
- an insulating layer provided on the nitride semiconductor layer;
- a first region provided in the nitride semiconductor layer;
- and
- a second region provided between the first region and the insulating layer in the nitride semiconductor layer, the second region having a higher electric resistivity than the first region.
2 more elements
A semiconductor device comprising:
- a nitride semiconductor layer;
- an insulating layer provided on the nitride semiconductor layer;
- and
- a region provided in a portion of the nitride semiconductor layer close to the insulating layer, the region having two oxygen atoms present at a lattice position of a nitrogen atom.
1 more element
A method for manufacturing a semiconductor device, comprising:
- forming a first insulating layer on a nitride semiconductor layer;
- performing a heat treatment in an atmosphere including oxygen under a condition that an amount of oxidation of the nitride semiconductor layer is equal to or less than 1 nm;
- and
- forming a region including oxygen in the nitride semiconductor layer.
1 more element
Dependencies are inferred from the claim text.