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US 2018/0026104 A1Published application
P-type oxide semiconductor, method for forming p-type oxide semiconductor, and transistor with the p-type oxide semiconductor
AssigneeElectronics and Telecommunications Research Institute
InventorsSung Haeng CHO, Sooji NAM, Chi-Sun HWANG, Su Jae LEE, Kyoung Ik CHO, Jae-Eun PI
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Abstract
Provided are a p-type oxide semiconductor, a method of forming the p-type oxide semiconductor, and a transistor with the p-type oxide semiconductor. The p-type oxide semiconductor includes an alkali metal and a tin oxide.
Claims16
A p-type oxide semiconductor comprising:
- an alkali metal;
- and
- a tin oxide.
A method of forming a p-type oxide semiconductor, comprising:
- reacting an alkali metal compound with a tin compound to form a reaction product;
- forming a layer, which is formed of the reaction product, on a substrate;
- and
- thermally treating the layer to form a p-type oxide semiconductor.
1 more element
A transistor comprising:
- a substrate;
- a gate electrode on the substrate;
- an insulation layer covering the gate electrode;
- source/drain electrodes on the insulation layer;
- and
- a semiconductor layer formed on the insulation layer and electrically connected to the source/drain electrodes,
- wherein the semiconductor layer comprises a p-type oxide semiconductor having a composition of a chemical formula of M2xSn3-xO3,
- wherein the M is an alkali metal, 0.015075≦x≦1.285714,
- 0.01≦[M]/([Sn]+[M])≦0.6,
- [M] represents a content (atomic %) of the M, and
- [Sn] represents a content (atomic %) of Sn.
8 more elements
Dependencies are inferred from the claim text.