Transistor, thin-film transistor substrate, and liquid crystal display
AssigneeMitsubishi Electric Corporation
InventorsRii HIRANO, Yusuke YAMAGATA, Naoki NAKAGAWA
Life of this patent
Estimating the term…
Loading patent…
AssigneeMitsubishi Electric Corporation
InventorsRii HIRANO, Yusuke YAMAGATA, Naoki NAKAGAWA
Estimating the term…
The present technique relates to a transistor that uses an oxide semiconductor as its channel layer and that is capable of suppressing fluctuations in threshold voltage, and to a thin-film transistor substrate and a liquid crystal display that include such a transistor. The transistor is configured such that an overlap length, which is a length of overlap in plan view between the source electrode and the channel protective film in a direction from the source electrode toward the drain electrode, is longer than an overlap length, which is a length of overlap in plan view between the drain electrode and the channel protective film in a direction from the drain electrode toward the source electrode.
1:
2:
3:
4:
5:
6:
7:
8:
9: