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US 2018/0026101 A1Published application
Fabrication of silicon-germanium fin structure having silicon-rich outer surface
AssigneeInternational Business Machines Corporation
InventorsHemanth Jagannathan, ChoongHyun Lee, Shogo Mochizuki, Koji Watanabe
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Abstract
A semiconductor structure includes a substrate and a silicon-germanium (SiGe) fin formed on the substrate. The SiGe fin has a first portion having a first doping profile and a second portion having a second doping profile. The first portion of the SiGe fin has a Si-rich outer surface.
Claims20
A semiconductor structure comprising:
- a substrate;
- and
- a silicon-germanium (SiGe) fin formed on the substrate and comprising a first portion having a first doping profile and a second portion having a second doping profile;
- wherein the first portion of the SiGe fin comprises a Si-rich outer surface.
1 more element
An integrated circuit comprising:
- a substrate;
- and
- a silicon-germanium (SiGe) fin formed on the substrate and comprising a first portion having a first doping profile and a second portion having a second doping profile;
- wherein the first portion of the SiGe fin comprises a Si-rich outer surface.
1 more element
Dependencies are inferred from the claim text.