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US 2018/0026100 A1Published application
Fabrication of silicon-germanium fin structure having silicon-rich outer surface
AssigneeInternational Business Machines Corporation
InventorsHemanth Jagannathan, ChoongHyun Lee, Shogo Mochizuki, Koji Watanabe
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Abstract
A method includes forming an oxide layer on a silicon-germanium (SiGe) fin formed on a substrate. The first oxide layer comprises a mixture of a germanium oxide compound (GeOx) and a silicon oxide compound (SiOx). The first oxide layer is modified to create a Si-rich outer surface of the SiGe fin. A silicon nitride layer is deposited on the modified first oxide layer.
Claims20
A method for fabricating a semiconductor structure, comprising:
- forming a first oxide layer on a silicon-germanium (SiGe) fin formed on a substrate, wherein the first oxide layer comprises a mixture of a germanium oxide compound and a silicon oxide compound;
- modifying the first oxide layer to form a Si-rich outer surface of the SiGe fin;
- and
- depositing a silicon nitride layer on the modified first oxide layer.
1 more element
Dependencies are inferred from the claim text.