Back to results
US 2018/0026098 A1Published application
Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsKevin J. Linthicum, John Claassen Roberts
Life of this patent
Estimating the term…
Abstract
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Claims16
A semiconductor structure, comprising:
- a substrate comprising silicon and comprising at least a layer having a resistivity of greater than 102 Ohms-cm;
- a diffusion barrier region comprising a rare-earth oxide and/or a rare-earth nitride located over a surface of the substrate;
- and
- a III-nitride material region located over the diffusion barrier region comprising the rare-earth oxide and/or the rare-earth nitride.’
1 more element
The semiconductor structure of claim 20, wherein the substrate is a bulk silicon wafer.
A method of forming a semiconductor structure, comprising:
- forming a diffusion barrier region comprising a rare-earth oxide and/or a rare-earth nitride over a substrate comprising silicon, the substrate comprising at least a layer having a resistivity of greater than 102 Ohms-cm;
- and
- forming a III-nitride material region over the diffusion barrier region comprising the rare-earth oxide and/or the rare-earth nitride.
Dependencies are inferred from the claim text.