N-channel gallium nitride transistors

A method of forming an n-channel gallium nitride transistor, comprising:

• forming a gallium nitride layer;
• forming a charge inducing layer comprising a polarization layer on the gallium nitride layer to form a 2D electron gas within the gallium nitride layer;
• forming a source structure and a drain structure formed in the gallium nitride layer;
• forming a recess within the polarization layer between the source structure and the drain structure, wherein a thickness of a portion of the polarization layer which is between the recess and the gallium nitride layer is less than about 1 nm;
• forming asymmetrical dielectric spacers of different widths;
• forming a gate dielectric within the recess;
• and
• forming a gate electrode adjacent the gate dielectric.

A wireless power/charging device transmission module, comprising:

• a coil assembly;
• and
• a transmitter, wherein the transmitter includes at least one n-channel gallium nitride transistor, comprising:
• a gallium nitride layer;
• a source structure and a drain structure formed in the gallium nitride layer;
• a charge inducing layer comprising a polarization layer extending between the source structure and the drain structure;
• a 2D electron gas within the gallium nitride layer;
• and
• a gate electrode extending at least partially into the polarization layer.

A wireless power/charging device receiving module, comprising:

• a coil assembly;
• a rectifier;
• and
• a load unit including a voltage regulator and a battery, wherein the voltage regulator includes at least one n-channel gallium nitride transistor, comprising:
• a gallium nitride layer;
• a source structure and a drain structure formed in the gallium nitride layer;
• a charge inducing layer comprising a polarization layer extending between the source structure and the drain structure;
• a 2D electron gas within the gallium nitride layer;
• and
• a gate electrode extending at least partially into the polarization layer.