Semiconductor wafers with reduced bow and warpage
AssigneeGlobalfoundries Inc.
InventorsAjey Poovannummoottil Jacob, Srinivasa R. Banna, Deepak K. Nayak, Bartlomiej J. Pawlak
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to semiconductor wafers with reduced bowing and warping and methods of manufacture. The structure includes a substrate including plurality of trenches which have progressively different depths as they extend radially inwardly from an edge of the substrate towards a center of the substrate.
Claims20
A structure comprising a substrate comprising a plurality of trenches which have progressively different depths as they extend radially inwardly from an edge of the substrate towards a center of the substrate.
A structure comprising a substrate comprising a plurality of trenches which have progressively different depths as they extend radially inwardly from an edge of the substrate towards a center of the substrate and a plurality of layers having a tensile component within at least each of the plurality of trenches.
A structure, comprising:
- a substrate;
- a plurality of trenches formed in the substrate and having progressively different depths as they extend radially inwardly from an edge of the substrate towards a center of the substrate;
- and
- a plurality of layers which generate a stress component on the substrate wherein one of:
- the stress component is a compressive stress which causes a concave bowing of the substrate and the progressively different depths of the plurality of trenches comprises a deeper profile as the trenches extend radially inward from the edge of the substrate;
- and
- the stress component is a tensile stress which causes a convex bowing of the substrate and the progressively different depths of the plurality of trenches comprises a deeper profile as the trenches extend radially outward from a center to the edge of the substrate.
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Dependencies are inferred from the claim text.