Cis structure with complementary metal grid and deep trench isolation and method for manufacturing the same

A method for manufacturing a CMOS image sensor structure, the method comprising:

• providing a substrate;
• forming a device layer on the substrate;
• forming a plurality of trenches extending from the device layer to the substrate;
• forming an anti-reflective coating layer conformally covering the device layer, the substrate and the trenches;
• forming a plurality of discrete reflective structures on the anti-reflective coating layer in the trenches respectively;
• forming a metal grid structure over the anti-reflective coating layer, wherein the metal grid structure is formed to comprise a plurality of discrete metal blocking structures, and the metal blocking structures and the reflective structures are staggered and define a plurality of pixel portions over the substrate;
• forming a passivation layer conformally covering the metal blocking structures, the anti-reflective coating layer and the reflective structures;
• and
• forming a plurality of color filters on the passivation layer in the pixel portions respectively.

A method for manufacturing a CMOS image sensor structure, the method comprising:

• providing a substrate;
• forming a device layer on the substrate;
• forming a plurality of trenches extending from the device layer to the substrate;
• forming an anti-reflective coating layer conformally covering the device layer, the substrate and the trenches;
• forming a plurality of discrete reflective structures on the anti-reflective coating layer in the trenches respectively;
• forming a metal grid structure over the anti-reflective coating layer, wherein the metal grid structure is formed to comprise a plurality of discrete metal blocking structures, and the metal blocking structures and the reflective structures are staggered and define a plurality of pixel portions over the substrate, wherein each of the pixel portions comprises a central area, and in each of the pixel portions, the metal blocking structures and the reflective structures surround the central area;
• forming a passivation layer conformally covering the metal blocking structures, the anti-reflective coating layer and the reflective structures;
• and
• forming a plurality of color filters on the passivation layer in the pixel portions respectively.