Memory device

A memory device comprising:

• a substrate having an upper surface;
• a stack of gate electrode layers disposed on the upper surface of the substrate and including unit electrodes and connecting electrodes,
• wherein each of the gate electrode layers includes a respective group of the unit electrodes, each of the unit electrodes of the group extending longitudinally in a first direction and the unit electrodes of the group being spaced from each other in a second direction, and
• within each of at least some of the gate electrode layers, a plurality of the connecting electrodes connect the unit electrodes of the gate electrode layer to each other,
• each of the plurality of the connecting electrodes of the gate electrode layer being interposed between and connecting adjacent ones of a respective pair of the unit electrodes in the gate electrode layer, and
• at least one of the plurality of connecting electrodes of the gate electrode layer being offset in the first direction relative to another of the connecting electrodes in the gate electrode layer;
• a plurality of channel structures extending vertically through at least some of the gate electrode layers so as to each extend in a direction perpendicular to the upper surface of the substrate;
• a plurality of first common source lines each extending horizontally in the first direction, and between which the unit electrodes of the gate electrode layers are disposed;
• and
• a plurality of second common source lines extending horizontally in the first direction, each of the second common source lines being interposed between adjacent ones of the first common source lines, and each of the second common source lines having a first section and a second section separated from each other in the first direction by a respective one of the connecting electrodes of the gate electrode layers,
• wherein at least a portion of the plurality of connecting electrodes are disposed in different positions in the first direction, between the first section and the second section.