Memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsPhil Ouk NAM, Sung Gil KIM, Seulye KIM, Hong Suk KIM, Jae Young AHN, Ji Hoon CHOI
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Abstract
In one embodiment, the semiconductor device includes a stack of alternating first interlayer insulating layers and gate electrode layers on a substrate. At least one of the gate electrode layers has a first portion and a second portion. The second portion forms an end portion of the at least one gate electrode layer, and a bottom surface of the second portion is at a lower level than a bottom surface of the first portion. A contact plug extends from the second portion.
Claims21
A semiconductor device, comprising:
- a stack of alternating first interlayer insulating layers and gate electrode layers on a substrate, at least one of the gate electrode layers having a first portion and a second portion, the second portion forming an end portion of the at least one gate electrode layer, and a bottom surface of the second portion being at a lower level than a bottom surface of the first portion;
- and
- a contact plug extending from the second portion.
A semiconductor device, comprising:
- a stack of alternating interlayer insulating layers and gate electrode layers on a substrate, at least one of the gate electrode layers having a first portion and second portion, the second portion forming an end portion of the at least one gate electrode layer, and a bottom surface of the second portion being closer to the substrate than a bottom surface of the first portion;
- and
- a contact plug extending from the second portion.
A semiconductor device, comprising:
- a stack of alternating interlayer insulating layers and gate electrode layers on a substrate, at least one of the gate electrode layers having a first portion and second portion, the second portion forming an end of the at least one gate electrode layer, and as the at least one gate electrode layer transitions from the first portion to the second portion, the at least one gate electrode layer projects towards the substrate;
- and
- a contact plug extending from the second portion.
18-32. (canceled)
Dependencies are inferred from the claim text.