Semiconductor memory device and method of manufacturing the same

A method of manufacturing a semiconductor memory device, comprising:

• stacking a plurality of first films and inter-layer insulating films in a first direction above a substrate to form a stacked body extending in a second direction intersecting the first direction and in a third direction intersecting the first direction and the second direction;
• forming a first opening in the stacked body, the first opening penetrating the stacked body;
• forming a second opening in the stacked body, the second opening extending in the second direction and dividing the stacked body in the third direction;
• sequentially forming a memory insulating film and an amorphous semiconductor layer on inner walls of the first opening and the second opening;
• performing heat treatment on the amorphous semiconductor layer and reforming a crystalline structure of the amorphous semiconductor layer to form a first semiconductor layer;
• and
• forming a first conductive film facing the first semiconductor layer via the memory insulating film.