Vertically stacked finfet fuse
AssigneeInternational Business Machines Corporation
InventorsPraneet Adusumilli, Alexander Reznicek, Oscar van der Straten
Life of this patent
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Abstract
A semiconductor structure including a stacked FinFET fuse is provided in which the stacked FinFET fuse includes a plurality of vertically stacked and spaced apart conductive semiconductor fin portions and a doped epitaxial semiconductor material structure located on exposed surfaces of each conductive semiconductor fin portion of the vertical stack. In the FinFET fuse, a topmost surface of a bottom doped epitaxial semiconductor material structure is merged to a bottommost surface of an overlying doped epitaxial semiconductor material structure.
Claims18
A semiconductor structure comprising:
- a FinFET fuse present in a fuse area and comprising a plurality of vertically stacked and spaced apart conductive semiconductor fin portions located one atop the other, and a doped epitaxial semiconductor material structure located on exposed surfaces of each conductive semiconductor fin portion of said plurality of vertically stacked and spaced apart conductive semiconductor fin portions, wherein a topmost surface of each doped epitaxial semiconductor material structure is merged with a bottommost surface of an overlying doped epitaxial semiconductor material structure.
A method of forming a semiconductor structure, said method comprising:
- providing a fin structure on a surface of an insulator layer, said fin structure comprising, from bottom to top, a first semiconductor fin portion, an insulator fin portion, and a second semiconductor fin portion;
- forming a gate structure straddling over a portion of said fin structure;
- converting said fin structure into a conductive fin structure by doping said first and second semiconductor fin portions, wherein said conductive fin structure comprises, from bottom to top, a first conductive semiconductor fin portion, said insulator fin portion and a second conductive semiconductor fin portion;
- removing said insulator fin portion;
- and
- forming a doped epitaxial semiconductor material structure on exposed surfaces of said first and said second conductive semiconductor fin portions, wherein a topmost surface of said doped epitaxial semiconductor material structure formed on said first conductive semiconductor fin portion is merged with a bottommost surface of said doped epitaxial semiconductor material structure formed on said second conductive semiconductor fin portion.
Dependencies are inferred from the claim text.