Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• alternately stacking a plurality of support layers and a plurality of molding layers on a substrate, each of the support layers including a plurality of openings and a plurality of sacrificial layers within the plurality of openings;
• forming a plurality of vertical holes through the plurality of support layers and through the plurality of molding layers;
• forming a lower electrode within the plurality of vertical holes;
• removing the plurality of sacrificial layers included in the plurality of support layers and the plurality of molding layers;
• and
• sequentially forming a dielectric layer and an upper electrode on the lower electrode layer.

A method of manufacturing a semiconductor device, the method comprising:

• stacking a molding layer and a preliminary support layer on a substrate;
• forming a support layer having a plurality of openings by removing at least a portion of the preliminary support layer;
• forming a sacrificial layer by filling the plurality of openings in the support layer with a different material from a material of the molding layer and from a material of the preliminary support layer, dry etching rate of the materials of the sacrificial layer and of the support layer being similar;
• forming a plurality of vertical holes through the support layer and through the molding layer by dry etching the support layer and the molding layer;
• forming a lower electrode within the plurality of vertical holes;
• and
• removing the sacrificial layer and the molding layer.