Semiconductor device and manufacture method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng CHANG, Chih-Han LIN, Horng-Huei TSENG
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate and at least one gate stack. The gate stack is present on the semiconductor substrate, and the gate stack includes at least one work function conductor and a filling conductor. The work function conductor has a recess therein. The filling conductor includes a plug portion and a cap portion. The plug portion is present in the recess of the work function conductor. The cap portion caps the work function conductor.
Claims20
A semiconductor device, comprising:
- a first gate stack comprising:
- a first work function conductor;
- and
- a first filling conductor comprising a plug portion and a cap portion, wherein:
- the plug portion of the first filling conductor is disposed between a first sidewall of the first work function conductor and a second sidewall of the first work function conductor, and
- the cap portion of the first filling conductor overlies an uppermost surface of the first work function conductor;
- and
- a first gate spacer disposed on a first side of the first gate stack and a second gate spacer disposed on a second side of the first gate stack opposite the first side, wherein:
- a sidewall of the cap portion and the first sidewall of the first work function conductor are in direct contact with a sidewall of the first gate spacer.
A semiconductor device, comprising:
- a first gate spacer and a second gate spacer;
- and
- a gate stack disposed between the first gate spacer and the second gate spacer, the gate stack comprising:
- a gate dielectric in direct contact with the first gate spacer and the second gate spacer;
- a first work function conductor over the gate dielectric and in direct contact with the first gate spacer and the second gate spacer;
- and
- a filling conductor comprising a plug portion and a cap portion, wherein:
- the plug portion is disposed between a first sidewall of the first work function conductor and a second sidewall of the first work function conductor, and
- the cap portion caps the first work function conductor.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first gate spacer and a second gate spacer;
- forming a first work function conductor between the first gate spacer and the second gate spacer, wherein the first work function conductor defines a recess;
- forming a mask in a portion of the recess to conceal a first portion of the first work function conductor, wherein a second portion of the first work function conductor is not concealed by the mask;
- recessing the first work function conductor between the first gate spacer and the second gate spacer to expose a first portion of a sidewall of the first gate spacer and a first portion of a sidewall of the second gate spacer;
- removing the mask after the recessing the first work function conductor;
- forming a filling conductor in the recess and in a space between the first portion of the sidewall of the first gate spacer and the first portion of the sidewall of the second gate spacer;
- and
- recessing the filling conductor to expose a second portion of the sidewall of the first gate spacer and a second portion of the sidewall of the second gate spacer.
Dependencies are inferred from the claim text.