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US 2018/0026034 A1Published application
Semiconductor structure with low defect
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBlandine DURIEZ, Georgios VELLIANITIS
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Abstract
Semiconductor structures are provided. The semiconductor structure includes a fin structure formed over a substrate and an isolation structure formed around the fin structure. The semiconductor structure further includes a nanowire structure formed over the fin structure and a gate structure formed around the nanowire structure. In addition, a bottommost of the nanowire structure is lower than a top surface of the isolation structure.
Claims20
A semiconductor structure, comprising:
- a fin structure formed over a substrate;
- an isolation structure formed around the fin structure;
- a nanowire structure formed over the fin structure;
- and
- a gate structure formed around the nanowire structure, wherein a bottommost of the nanowire structure is lower than a top surface of the isolation structure.
2 more elements
A semiconductor structure, comprising:
- a fin structure formed over a substrate;
- an isolation structure formed around the fin structure;
- a nanowire structure formed over the fin structure;
- a gate structure formed around the nanowire structure;
- and
- a source/drain structure formed in the nanowire structure adjacent to the gate structure, wherein a cavity is located under the source/drain structure.
3 more elements
A semiconductor structure, comprising:
- a fin structure formed over a substrate;
- an isolation structure formed around the fin structure;
- a nanowire structure formed over the fin structure;
- a gate structure formed around the nanowire structure;
- a spacer formed on a sidewall of the gate structure;
- and
- a source/drain structure formed in the nanowire structure adjacent to the gate structure,
- wherein the source/drain structure and the fin structure are separated by a cavity.
5 more elements
Dependencies are inferred from the claim text.