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US 2018/0026004 A1Published application
Bonding wire, wire bonding method using the bonding wire, and electrical connection part of semiconductor device using the bonding wire
AssigneeSamsung Electronics Co., Ltd.
InventorsWON-GIL HAN, SANGHO AN, YONG JE LEE, JAE HEUNG LEE, SEUNGWEON HA
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Abstract
A bonding wire includes a wire core including a silver-palladium alloy, and a coating layer disposed on a sidewall of the wire core. A palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.
Claims20
A bonding wire comprising:
- a wire core including a silver-palladium alloy;
- and
- a coating layer disposed on a sidewall of the wire core,
- wherein a palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.
1 more element
A bonding wire comprising:
- a wire core including a silver-palladium alloy;
- and
- a coating layer disposed on a sidewall of the wire core, the coating layer including gold,
- wherein a thickness of a thinnest portion of the coating layer is about 50 nm or more, and
- wherein a thickness of a thickest portion of the coating layer is about 200 nm or less.
2 more elements
An electrical connection part of a semiconductor device, comprising:
- a device including a first pad and a second pad spaced apart from each other;
- and
- a wire structure electrically connecting the first pad to the second pad,
- wherein the wire structure comprises:
- a first bonding portion in contact with the first pad;
- a second bonding portion in contact with the second pad;
- and
- a wire loop connecting the first bonding portion to the second bonding portion,
- wherein the wire loop comprises:
- a wire core including a silver-palladium alloy;
- and
- a coating layer disposed on a sidewall of the wire core,
- wherein a palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.
10 more elements
20-32. (canceled)
Dependencies are inferred from the claim text.